Ph.D. in electrical engineering / Power Electronics Device Design
Knowledge of MOSFET in SiC is highly desireable.
Experience:
1 to 2 years of post-doctoral SiC device development experience preferred
Min 2 years of device test and characterization experience
Good knowledge and understanding of SiC devices and materials (device physics, processing, measurements, modeling, simulation)
Hands-on experience with SiC MOSFET testing .
Familiar with TCAD simulation using Silvaco software preferre
Ability to work independently with minimum supervision
Has a good understanding of device/process interactions and integration issues.
Background in statistical data analysis is highly preferable.
Job Competencies:
Ability to read/write/speak English. Ability to understand and perform to all specifications required to do the job.
Job Element Wt % Specific Duty
Daily Tasks
70%
Designs and simulates epitaxial structures to meet device performance targets, works closely with the advanced materials engineers to procure and test epi designs
Does mask layout.
Creates test structure layouts to fabricate and characterize new device technologies and demonstrate margin for volume manufacturing
Performs DC testing and characterization of devices.
Participates in on-going continuous yield/performance efforts
Collaboration
25%
Works closely with the advanced process development engineers to define new unit process requirements and targets, design/integrate wafer fab process flows
Works with test engineers to define test conditions and develop new tests
Works with the quality group to define and meet reliability requirements for new devices
Works with external foundry to specify critical in-line and PCM process control metrics for high volume manufacturing
Customer Interactions
5 %
Works with customers to define and specify device technology requirements to support existing and future product development efforts
Works with company customers to assess and meet customer product performance
Responsible for the device design and characterization of SiC MOSFET and Diodes.